| PART |
Description |
Maker |
| 15-29-1024 0015291024 7859-2554N |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (15渭") Gold (Au), 2 Circuits,with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (15μ) Gold (Au), 2 Circuits,with Open End
|
Molex Electronics Ltd.
|
| 15-29-1025 0015291025 A-7859-2A554 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (15渭") Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (15μ) Gold (Au), 2 Circuits, with Pin Stop
|
Molex Electronics Ltd.
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| APT2X101D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 200; trr (nsec): 39; VF (V): 1.1; Qrr (nC): 840; 100 A, 200 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| LCD160X160A LCD-160X160A |
160 x 160 Dots Graphic LCD 160 × 160点阵图形液晶显示
CONNECTOR ACCESSORY
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| B-233T |
B-233T 3PDT, 160 Amps, 115/200 VAC, 400 Hz
|
Tyco Electronics
|
| TLWH1100T11 TLWH1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
